Vishay SIHP Type N-Channel MOSFET, 21 A, 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3

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包裝方式:
RS庫存編號:
279-9927
製造零件編號:
SIHP155N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220AB

Series

SIHP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.157Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay SIHP Series MOSFET, 600V Drain Source Voltage, 21A Continuous Drain Current - SIHP155N60EF-GE3


This MOSFET is a high-voltage, N-channel transistor designed for power switching in industrial and electronic control environments. It operates as an enhancement-mode device in a through-hole TO-220 package, providing robust power handling for applications requiring substantial drain-source voltage and thermal endurance.

Features and Benefits:


• 600V drain-source rating enables high-voltage switching capability
• 21 A continuous drain current supports elevated load currents
• 0.157 Ω low Rds(on) reduces conduction losses
• 179W power dissipation allows sustained power handling
• 38 nC typical gate charge permits predictable switching behaviour
• -55 °C to 150 °C operating range suits harsh-temperature conditions

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for motor drive circuits in industrial automation
• Used for switch-mode power electronics in lighting control
• Can be used for inverter stages in industrial equipment
• Used with thermal management systems in power assemblies

What gate drive considerations are required for reliable switching?


The gate tolerance is ±30V maximum, so gate drivers should respect this limit and provide sufficient drive current to charge the 38 nC typical gate charge for controlled switching speeds.

How should thermal management be arranged for continuous operation?


With 179W maximum power dissipation and TO-220 mounting, secure the device to an appropriate heatsink and ensure adequate airflow to maintain junction temperatures within the -55 °C to 150 °C operating range.

What electrical limits must be observed during design?


The transistor must not be subjected to drain-source voltages above 600V or continuous drain currents above 21 A to avoid exceeding device ratings.

Which package and mounting style does the device use for PCB or chassis integration?


It is supplied in a through-hole TO-220AB package with three pins, allowing secure chassis mounting and straightforward replacement in legacy designs.

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