Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263 SIHB155N60EF-GE3

N

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 管,共 50 件)*

TWD4,410.00

(不含稅)

TWD4,630.50

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 1,000 件從 2026年1月12日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每管*
50 - 200TWD88.20TWD4,410.00
250 +TWD86.40TWD4,320.00

* 參考價格

RS庫存編號:
653-175
製造零件編號:
SIHB155N60EF-GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

179W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.79mm

Width

9.65 mm

Automotive Standard

No

The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.

Pb Free

Halogen free

RoHS compliant

相關連結