Vishay EF Type N-Channel Single MOSFETs, 21 A, 600 V Enhancement, 3-Pin TO-263

N

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RS庫存編號:
653-176
製造零件編號:
SIHB155N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-263

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Power Dissipation Pd

179W

Maximum Operating Temperature

150°C

Length

2.79mm

Standards/Approvals

No

Width

9.65 mm

Automotive Standard

No

The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for enhanced switching performance. It offers a low figure of merit (FOM), reduced effective capacitance, and optimized thermal behaviour. Designed for server, telecom, SMPS, and power factor correction supplies, it delivers reliable efficiency in demanding power applications.

Pb Free

Halogen free

RoHS compliant

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