Vishay EF Type N-Channel Power MOSFET, 31 A, 600 V Enhancement, 8-Pin PowerPAK

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RS庫存編號:
653-082
製造零件編號:
SIHR120N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.125Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

45nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

8mm

Length

10.42mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 31A Maximum Continuous Drain Current - SIHR120N60EF-T1GE3


This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion roles in industrial and electronic systems. It operates as an enhancement-mode device suitable for applications requiring robust high-voltage handling, fast gate control and surface-mounted assembly.

Features and Benefits:


• 600V rating enables high-voltage switching applications • 31A continuous drain current supports substantial load handling • 0.125Ω on-resistance reduces conduction losses • 45nC typical gate charge allows predictable switching behaviour • 278W power dissipation permits high-power operation • -55°C to 150°C range supports wide thermal environments

Applications


• Suitable for high-voltage SMPS and power supplies • Ideal for industrial motor drives and inverters • Used for inductive load switching in automation systems • Can be used for high-voltage DC-DC converters • Suitable for power stages in welding and heating controls

What package and mounting form does it use for PCB assembly?


It is supplied in a PowerPAK surface-mount package with an 8-pin configuration suited to automated placement.

What gate voltage limits must designers observe?


The maximum gate-to-source rating is 30V, so gate drive circuits should remain within this boundary.

How should thermal management be approached for high-power tasks?


Design should account for the 278W dissipation capability with appropriate PCB copper, thermal vias or heatsinking to maintain junction temperatures within limits.

What maximum drain-source voltage can be expected during operation?


The device is rated to withstand up to 600V between drain and source under specified conditions.

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