Vishay EF Type N-Channel MOSFET, 36 A, 650 V Enhancement, 5-Pin PowerPAK 8 x 8
- RS庫存編號:
- 200-6831
- 製造零件編號:
- SIHH070N60EF-T1GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD611.00
(不含稅)
TWD641.55
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD122.20 | TWD611.00 |
| 750 - 1495 | TWD119.00 | TWD595.00 |
| 1500 + | TWD117.20 | TWD586.00 |
* 參考價格
- RS庫存編號:
- 200-6831
- 製造零件編號:
- SIHH070N60EF-T1GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 8 x 8 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 71mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 75nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 202W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 8.1mm | |
| Standards/Approvals | No | |
| Width | 1.05 mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 8 x 8 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 71mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 75nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 202W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 8.1mm | ||
Standards/Approvals No | ||
Width 1.05 mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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