Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

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小計(1 卷,共 3000 件)*

TWD389,400.00

(不含稅)

TWD408,870.00

(含稅)

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RS庫存編號:
653-081
製造零件編號:
SIHR120N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

EF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.125Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

8 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for improved switching efficiency. It delivers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Housed in a PowerPAK 8x8LR package, it's Ideal for server, telecom, lighting, industrial, and solar power applications.

Pb Free

Halogen free

RoHS compliant

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