Vishay EF Type N-Channel Power MOSFET, 26 A, 650 V Depletion, 4-Pin PowerPAK 8 x 8 SiHH105N60EF-T1GE3

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包裝方式:
RS庫存編號:
239-8632
製造零件編號:
SiHH105N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.091Ω

Channel Mode

Depletion

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

33nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

174W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series EF Power MOSFET, 650V Maximum Drain Source Voltage, 26A Maximum Continuous Drain Current - SiHH105N60EF-T1GE3


This power MOSFET is a high-voltage switching transistor designed for surface-mount applications in industrial and automotive environments. It operates across a wide temperature span and is intended for circuits requiring robust high-voltage switching with moderate continuous current capacity and gate drive characteristics.

Features and Benefits:


• 650V drain-source rating enables high-voltage switching
• 26A continuous drain current supports substantial load currents
• 0.091Ω low Rds(on) reduces conduction losses
• 174W power dissipation allows sustained thermal loading
• 33nC typical gate charge enables predictable drive requirements
• 30V gate-rated voltage supports common gate-drive schemes

Applications


• Suitable for high-voltage DC-DC converters in industrial power supplies
• Ideal for automotive power modules meeting AEC‑Q101 needs
• Used for primary-side switching in SMPS and inverters
• Can be used for motor drive half‑bridge stages in electrified systems
• Suitable for ruggedised electronic assemblies requiring surface mounting

What mounting format does it use for compact assemblies?


It is supplied in a PowerPAK 8x8 format designed for surface mounting to facilitate dense PCB layouts and thermal coupling to copper pours.

How does it perform across temperature extremes?


It is specified to operate from -55°C up to +150°C, so it can function in demanding ambient and elevated junction scenarios when cooled appropriately.

What gate-drive constraints should be observed?


The device must not be driven beyond a gate-source voltage of 30V and typical gate charge is 33nC, which informs peak drive current and driver selection.

Is it suitable for automotive qualification requirements?


The device meets the AEC‑Q101 automotive standard, making it appropriate for vehicle‑grade electronic designs that require that qualification.

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