Vishay EF Type N-Channel Power MOSFET, 40 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK055N60EF-T1GE3
- RS庫存編號:
- 252-0264
- 製造零件編號:
- SIHK055N60EF-T1GE3
- 製造商:
- Vishay
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* 參考價格
- RS庫存編號:
- 252-0264
- 製造零件編號:
- SIHK055N60EF-T1GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.05mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 236W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Length | 6.15mm | |
| Standards/Approvals | RoHS | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.05mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 236W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Length 6.15mm | ||
Standards/Approvals RoHS | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 40A Maximum Continuous Drain Current - SIHK055N60EF-T1GE3
This power MOSFET is a high-voltage, N‑channel device designed for demanding power-conversion and automotive applications. It operates across a wide temperature range and is intended for surface-mount deployment where robust switching, high voltage tolerance and automotive qualification are required.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 40A continuous current supports substantial load currents • 0.05mΩ Rds(on) minimises conduction losses during operation • 236W power dissipation allows high thermal throughput • 90nC typical gate charge reduces switching energy per transition • AEC-Q101 qualification meets automotive stress and reliability needs
Applications
• Suitable for traction inverter stages in automotive electronics • Ideal for high-voltage DC-DC converters in industrial automation • Used for switch-mode power supplies in power distribution systems • Can be used for motor-drive stages requiring high current capacity • Suitable for Compact surface-mounted power modules
What gate-drive considerations are required for efficient switching?
Drive circuits should accommodate up to ±20V gate excursion and supply sufficient Peak current to charge the 90nC gate to the chosen Vgs for the defined switching speed while managing switching losses.
How does thermal management affect continuous operation?
To sustain the 236W dissipation, thermal pathways such as large copper planes or heatsinking to the PowerPAK substrate are necessary to keep junction temperatures within the specified +150°C limit.
What mounting and layout practices improve performance?
Use low-inductance surface-mount layouts with short, wide tracks for drain and source, and place gate resistors and decoupling close to the pins to reduce ringing and electromagnetic interference.
What environmental range can be expected for field use?
The device is specified for operation from -55°C up to +150°C, supporting a broad span of ambient and elevated junction conditions in industrial and automotive environments.
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