Vishay EF Type N-Channel Power MOSFET, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3
- RS庫存編號:
- 252-0265
- 製造零件編號:
- SIHK075N60EF-T1GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
TWD269,600.00
(不含稅)
TWD283,080.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 4000 | TWD134.80 | TWD269,600.00 |
| 6000 + | TWD130.80 | TWD261,600.00 |
* 參考價格
- RS庫存編號:
- 252-0265
- 製造零件編號:
- SIHK075N60EF-T1GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.061Ω | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 192W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.061Ω | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 192W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 6.15mm | ||
Width 5.15mm | ||
Automotive Standard AEC-Q101 | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 192W Power Dissipation - SIHK075N60EF-T1GE3
This power MOSFET is a high-voltage N-channel semiconductor designed for demanding switching and power-control environments. It operates across a wide temperature range and is supplied in a low-profile surface-mount package suitable for compact assemblies. The device is intended for applications requiring substantial continuous current handling and robust voltage capability in constrained footprints.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching capability
• 33A continuous drain current supports heavy-load operation
• 0.061Ω Rds(on) reduces conduction losses under load
• 192W maximum dissipation allows high-power handling
• 72nC typical gate charge provides predictable switching behaviour
• AEC‑Q101 qualification supports automotive-grade thermal stress
• 33A continuous drain current supports heavy-load operation
• 0.061Ω Rds(on) reduces conduction losses under load
• 192W maximum dissipation allows high-power handling
• 72nC typical gate charge provides predictable switching behaviour
• AEC‑Q101 qualification supports automotive-grade thermal stress
Applications
• Suitable for traction and high-voltage vehicle power electronics
• Ideal for half-bridge and full-bridge switching topologies
• Used with isolated gate drivers in industrial inverters
• Can be used for switched-mode power supplies up to high voltage
• Appropriate for motor drive stages in automotive systems
• Ideal for half-bridge and full-bridge switching topologies
• Used with isolated gate drivers in industrial inverters
• Can be used for switched-mode power supplies up to high voltage
• Appropriate for motor drive stages in automotive systems
What thermal range can it withstand in harsh environments?
It is rated to operate from -55°C up to +150°C, permitting use across low-temperature starts and elevated operating conditions.
Which package format does it use for PCB assembly?
The device is provided in a PowerPAK 10x12 surface-mount enclosure designed for efficient heat transfer and compact board placement.
How does the gate voltage limit affect drive design?
The maximum gate-source voltage is 20V, so gate drivers should be specified to remain within this boundary to prevent gate overstress.
Is it suitable for RoHS-restricted assemblies?
The component complies with RoHS requirements, permitting inclusion in assemblies that mandate restricted-substance adherence.
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