Vishay Type N-Channel MOSFET & Diode, 33 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK075N60EF-T1GE3

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包裝方式:
RS庫存編號:
252-0266
製造零件編號:
SIHK075N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.05mΩ

Channel Mode

Depletion

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

54nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage.

4th generation E series technology

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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