Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

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包裝方式:
RS庫存編號:
268-8301
製造零件編號:
SIHH085N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

SIHH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.085Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

63nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 30A Drain Current - SIHH085N60EF-T1GE3


This n-channel MOSFET is a high-voltage switching device designed for use in power conversion and control systems within industrial and automation environments. It operates across a wide temperature range and is intended for surface-mounted assemblies where robust high-voltage handling and efficient switching are required.

Features and Benefits:


• 650V drain rating enabling high-voltage switching capability • 30A continuous drain current supporting sustained load operation • 0.085Ω Rds(on) reducing conduction losses in power paths • 63nC typical gate charge allowing predictable switching performance • 184W power dissipation for high thermal load handling • 150°C maximum junction temperature for elevated temperature use

Applications


• Suitable for industrial motor drive inverters requiring high-voltage devices • Used for power supplies in automation equipment with high switching demands • Ideal for switch-mode converters handling significant power dissipation • Can be used for high-voltage relay replacement in electrical control panels

What mounting style does it require on a board?


It is supplied in a PowerPAK 8x8 surface-mount package requiring compatible solder land patterns for thermal and electrical connection.

How does the gate voltage limit affect control circuitry?


The gate must be driven within ±30V to prevent gate dielectric stress, so gate drivers should provide appropriate voltage margins and protection.

What thermal conditions should be considered during design?


With a 184W dissipation rating and 150°C maximum operating temperature, thermal management such as heat spreading and adequate PCB copper is necessary to maintain safe junction temperatures.

What pin configuration complexity should designers expect?


The device has four pins, which require correct assignment in layout to ensure low-inductance connections for drain, source and gate functions.

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