Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- RS庫存編號:
- 268-8303
- 製造零件編號:
- SIHH250N60EF-T1GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 2 件）*
TWD378.00
(不含稅)
TWD396.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD189.00 | TWD378.00 |
| 50 - 98 | TWD170.00 | TWD340.00 |
| 100 - 248 | TWD139.00 | TWD278.00 |
| 250 + | TWD136.00 | TWD272.00 |
* 參考價格
- RS庫存編號:
- 268-8303
- 製造零件編號:
- SIHH250N60EF-T1GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.25Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 89W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.25Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 89W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3
This MOSFET is a high-voltage switching device intended for power conversion and control applications where compact surface mounting is required. It operates as an enhancement-mode N-channel transistor and is designed to handle elevated voltages and currents in demanding thermal environments while conforming to RoHS restrictions.
Features and Benefits:
• 650V rating enables high-voltage switching capability
• 13A continuous current supports substantial load drive
• 0.25 Ω Rds(on) reduces conduction losses under load
• 89W power dissipation allows sustained thermal performance
• 23 nC typical gate charge permits moderate-speed gate transitions
• Vgs maximum 30V ensures robust gate-drive margin
• 13A continuous current supports substantial load drive
• 0.25 Ω Rds(on) reduces conduction losses under load
• 89W power dissipation allows sustained thermal performance
• 23 nC typical gate charge permits moderate-speed gate transitions
• Vgs maximum 30V ensures robust gate-drive margin
Applications
• Suitable for offline switch-mode power supplies
• Ideal for high-voltage motor drive stages
• Used with isolated gate drivers in power converters
• Can be used for resonant and soft-switching topologies
• Suitable for industrial power-management modules
• Ideal for high-voltage motor drive stages
• Used with isolated gate drivers in power converters
• Can be used for resonant and soft-switching topologies
• Suitable for industrial power-management modules
What temperature extremes can it tolerate in operation?
It is specified to operate across a wide temperature span from -55 °C up to 150 °C for use in harsh thermal conditions.
Which package and mounting method are provided for compact assemblies?
It is supplied in a PowerPAK 8x8 package intended for surface-mount placement to save board area and improve thermal conduction.
How does the device’s forward voltage affect body-diode conduction?
The forward voltage of 1.2V indicates the typical voltage drop across the intrinsic diode during reverse conduction, influencing loss calculations in synchronous rectification or freewheeling paths.
What pin configuration is available for circuit integration?
The component exposes four pins, facilitating separate connections for source, drain, gate and tab or thermal-pad arrangements during PCB layout.
相關連結
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3
- Vishay EF Type N-Channel MOSFET 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3
- Vishay SIHK Type N-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3