Vishay SIHH Type N-Channel MOSFET, 30 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH085N60EF-T1GE3

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小計(1 卷,共 3000 件)*

TWD426,600.00

(不含稅)

TWD447,930.00

(含稅)

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RS庫存編號:
268-8300
製造零件編號:
SIHH085N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

SIHH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.085Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

184W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

8mm

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct

Low effective capacitance

Avalanche energy rated

Low figure of merit

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