Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

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包裝方式:
RS庫存編號:
268-8309
製造零件編號:
SIHK105N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

51nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

142W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 24A Maximum Continuous Drain Current - SIHK105N60EF-T1GE3


This MOSFET is a high-voltage N-channel enhancement device designed for power switching in demanding PCB-mounted systems. It operates across a wide temperature range and is intended for applications requiring substantial drain current and elevated blocking voltage while conforming to RoHS environmental standards.

Features and Benefits:


• 650V drain rating enables high-voltage switching capability
• 24A continuous drain current supports heavy-load operation
• 0.105Ω Rds(on) reduces conduction losses under load
• 142W power dissipation allows high-power handling
• 51nC typical gate charge minimises switching energy losses
• 30V gate rating permits wide gate-drive flexibility

Applications


• Suitable for industrial power converters and inverters
• Ideal for high-voltage motor-drive front ends
• Used with switch-mode power supplies for energy-efficient switching
• Can be used for solid-state relays and protection circuits
• Suitable for telecom power distribution modules

What package format does this device use for PCB assembly?


It is supplied in a PowerPAK 10x12 package intended for surface-mount PCB attachment, providing a compact footprint and thermal relief for high-power layouts.

How does the device cope with extreme ambient temperatures?


The device is specified to operate from -55°C up to 150°C, covering wide industrial thermal conditions without derating below those limits.

What gate-drive considerations should be observed for reliable operation?


Gate excursions must be limited to a maximum of 30V to prevent gate oxide stress

appropriate gate resistances and drive circuitry are recommended to manage the 51nC charge during switching.

Is this device suitable for automotive qualification?


It is not designated as automotive-grade, so it should not be assumed to meet automotive-specific qualification requirements.

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