Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs

小計（1 卷，共 2000 件）*

TWD174,600.00

(不含稅)

TWD183,320.00

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法存取 - 請稍後再回來查看
單位
每單位
每卷*
2000 +TWD87.30TWD174,600.00

* 參考價格

RS庫存編號:
268-8314
製造零件編號:
SIHK185N60EF-T1GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

650V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.193Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Power Dissipation Pd

114W

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

相關連結