Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

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TWD174,600.00

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TWD183,320.00

(含稅)

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RS庫存編號:
268-8314
製造零件編號:
SIHK185N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

650V

Series

SIHK

Package Type

PowerPAK 10 x 12

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.193Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Typical Gate Charge Qg @ Vgs

32nC

Maximum Power Dissipation Pd

114W

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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