Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

RS庫存編號:: 268-8314
製造零件編號:: SIHK185N60EF-T1GE3
製造商:: Vishay

Vishay SIHK Type N-Channel MOSFET, 16 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK185N60EF-T1GE3

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小計（1 卷，共 2000 件）*

TWD192,000.00

(不含稅)

TWD201,600.00

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單位	每單位	每卷*
2000 +	TWD96.00	TWD192,000.00

* 參考價格

RS庫存編號:: 268-8314
製造零件編號:: SIHK185N60EF-T1GE3
製造商:: Vishay

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	16A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PowerPAK 10 x 12
	Series	SIHK
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.193Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	32nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	114W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Length	9.9mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 16A
	Maximum Drain Source Voltage Vds 650V
	Package Type PowerPAK 10 x 12
	Series SIHK
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.193Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 32nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 114W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Length 9.9mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHK185N60EF-T1GE3

COO (Country of Origin):: CN

Vishay SIHK Series MOSFET, 650V Drain Source Voltage, 16A Continuous Drain Current - SIHK185N60EF-T1GE3

This MOSFET is a high-voltage N-channel transistor designed for power switching on PCB assemblies. It operates across a wide temperature range and suits industrial control and power-conversion environments where robust voltage handling and thermal tolerance are required.

Features and Benefits:

• 650V drain voltage enables high-voltage switching applications • 16A continuous drain current supports substantial load currents • 0.193Ω low Rds(on) reduces conduction losses and heat generation • 114W power dissipation allows sustained power handling • 32nC typical gate charge supports moderately fast switching speeds • 30V maximum gate drive permits flexible gate-control designs

Applications

• Suitable for high-voltage power converters and inverters • Ideal for switch-mode power supplies in industrial systems • Used for motor drive switching in automation equipment • Can be used for lighting ballast and electronic transformer control

What thermal extremes can it tolerate in system design?

It is specified to operate down to -55°C and up to 150°C, allowing use in environments with wide ambient temperature variation.

What mounting considerations are needed on a PCB?

It is intended for PCB mounting in a PowerPAK 10x12 package with eight pins, so PCB layout should provide adequate thermal vias and copper area for heat spreading.

How should gate drive be limited to protect the device?

The gate must not exceed ±30V relative to the source, so gate-drive circuitry should include clamping or regulation to prevent overvoltage.

What charge characteristic affects gate-driver selection?

The typical gate charge is 32nC at the specified gate bias, informing the required drive current and switching losses for gate-driver sizing.