Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3

查看所有MOSFETs

小計（1 卷，共 2000 件）*

TWD223,400.00

(不含稅)

TWD234,560.00

(含稅)

Add to Basket
選擇或輸入數量
下方訂單 TWD1,300.00（不含稅）成本 TWD500.00。
有庫存
  • 加上 2,000 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
每卷*
2000 +TWD111.70TWD223,400.00

* 參考價格

RS庫存編號:
268-8308
製造零件編號:
SIHK105N60EF-T1GE3
製造商:
Vishay
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

142W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

9.9mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies, and telecom power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

相關連結