Vishay SIHH Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH250N60EF-T1GE3

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RS庫存編號:
268-8302
製造零件編號:
SIHH250N60EF-T1GE3
製造商:
Vishay
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品牌

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

SIHH

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.25Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

89W

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
TW

Vishay SIHH Series MOSFET, 650V Drain Source Voltage, 13A Continuous Drain Current - SIHH250N60EF-T1GE3


This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in industrial electrical systems. It is intended for surface-mounted assemblies where robust voltage handling and thermal endurance are required, and it operates across a wide temperature range to suit demanding environments.

Features and Benefits:


• 650V drain capability enables high-voltage switching applications • 13A continuous drain current supports substantial load currents • 0.25Ω Rds(on) reduces conduction losses during operation • 23nC typical gate charge allows controlled switching dynamics • 30V maximum gate drive tolerance accommodates standard gate drivers • 89W power dissipation permits sustained thermal loading

Applications


• Suitable for high-voltage power switching in industrial drives • Ideal for switch-mode power supplies requiring high Vds • Used for motor inverter stages handling moderate currents • Can be used for power factor correction modules in plant equipment

What mounting format is required for circuit assembly?


It uses a PowerPAK 8x8 surface package with four pins intended for low-inductance PCB mounting.

How does the device behave under extreme temperatures?


It is specified to operate from -55°C up to 150°C, allowing use in installations with wide thermal variation.

What is the maximum voltage between drain and source?


The maximum drain-source voltage rating is 650V, defining the upper limit for steady-state blocking voltage.

What gate drive limitations should be observed?


The gate-source voltage must not exceed 30V to avoid damaging the gate oxide.

Are there regulatory material restrictions noted?


The component is listed as RoHS-compliant, indicating restriction of certain hazardous substances.

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