製造零件編號

Vishay Single EF 1 Type N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3

RS庫存編號:: 180-7768
製造零件編號:: SIHP21N60EF-GE3
製造商:: Vishay

Vishay Single EF 1 Type N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3

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小計（1 包，共 2 件）*

TWD160.00

(不含稅)

TWD168.00

訂單超過 $1,300.00 免費送貨

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從 2026年6月08日發貨

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單位	每單位	每包*
2 - 12	TWD80.00	TWD160.00
14 - 24	TWD78.50	TWD157.00
26 +	TWD76.50	TWD153.00

* 參考價格

RS庫存編號:: 180-7768
製造零件編號:: SIHP21N60EF-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	21A
	Maximum Drain Source Voltage Vds	600V
	Series	EF
	Package Type	TO-220AB
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.176Ω
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	84nC
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	227W
	Maximum Operating Temperature	150°C
	Transistor Configuration	Single
	Height	6.71mm
	Length	14.4mm
	Width	10.52 mm
	Standards/Approvals	No
	Number of Elements per Chip	1
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 21A
	Maximum Drain Source Voltage Vds 600V
	Series EF
	Package Type TO-220AB
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.176Ω
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 84nC
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 227W
	Maximum Operating Temperature 150°C
	Transistor Configuration Single
	Height 6.71mm
	Length 14.4mm
	Width 10.52 mm
	Standards/Approvals No
	Number of Elements per Chip 1
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

The Vishay SIHP21N60EF is a N-channel EF series power MOSFET with fast body diode having drain to source voltage(Vds) of 600V and gate to source voltage (VGS) 30V. It is having TO-220AB package. It is offers drain to source resistance (RDS.) of 0.176ohms at 10VGS. Maximum drain current 21A.

Fast body diode MOSFET using E series technology

Reduced trr, Qrr, and IRRM

Low figure-of-merit (FOM): Ron x Qg

Vishay Single EF 1 Type N-Channel Power MOSFET, 21 A, 600 V, 3-Pin TO-220AB SIHP21N60EF-GE3

訂單超過 $1,300.00 免費送貨

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