Vishay EF Type N-Channel Power MOSFET, 8.4 A, 600 V Enhancement, 3-Pin TO-220 SiHA186N60EF-GE3

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包裝方式:
RS庫存編號:
210-4963
製造零件編號:
SiHA186N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

168mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

21nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

33W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

28.1mm

Height

4.3mm

Width

9.7mm

Automotive Standard

No

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 33W Maximum Power Dissipation - SiHA186N60EF-GE3


This power MOSFET is a high-voltage N-channel transistor designed for switched power applications where robust drain-to-source performance and compact through-hole mounting are required. It operates across a wide temperature span and is suited to designs requiring a 600V blocking capability, driven from standard gate voltages and mounted on conventional heatsinking arrangements.

Features and Benefits:


• 600V rating enables high-voltage switching in power stages
• 8.4A continuous drain current supports moderate load currents
• 168 mΩ Rds(on) reduces conduction losses at operational currents
• 33W power dissipation allows sustained thermal loading with heatsink
• 21 nC typical gate charge gives predictable switching energy demand
• 30V maximum gate drive permits common gate drive voltages

Applications


• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front ends
• Used for power conversion in renewable-energy inverters
• Can be used for lighting ballast and lamp-control circuits
• Suitable for laboratory and prototyping through-hole assemblies

What gate voltage range should I design for in control circuitry?


Keep gate drive within a ±30V limit relative to source, with typical switching driven by gate voltages up to 30V to ensure safe operation.

How does thermal management affect continuous current capability?


Continuous drain current depends on thermal resistance to ambient

using a heatsink to keep junction temperature below 150 °C maintains the rated 8.4A capability.

Is this device suitable for automotive systems requiring specific approvals?


It does not carry automotive-grade approvals, so it should not be specified where automotive-certified components are mandatory.

What switching considerations arise from the gate charge value?


The 21 nC gate charge defines the required driver current and switching transition times

plan driver sizing to balance switching losses and transition speed.

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