Vishay EF Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220 SIHP186N60EF-GE3

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RS庫存編號:
200-6818
製造零件編號:
SIHP186N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

650V

Series

EF

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

193mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

32nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Length

10.52mm

Height

14.4mm

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHP186N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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