Vishay EF Type N-Channel Power MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220AB SiHP105N60EF-GE3
- RS庫存編號:
- 200-6795
- 製造零件編號:
- SiHP105N60EF-GE3
- 製造商:
- Vishay
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- 加上 90 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD223.20 | TWD1,116.00 |
| 15 - 20 | TWD217.60 | TWD1,088.00 |
| 25 + | TWD214.00 | TWD1,070.00 |
* 參考價格
- RS庫存編號:
- 200-6795
- 製造零件編號:
- SiHP105N60EF-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 10.52mm | |
| Height | 14.4mm | |
| Width | 4.65mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 10.52mm | ||
Height 14.4mm | ||
Width 4.65mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 650V Drain Source Voltage, 29A Continuous Drain Current - SiHP105N60EF-GE3
This power MOSFET is a high-voltage switching device designed for demanding power-conversion and control roles in industrial and electronic systems. It is an N-channel enhancement-mode transistor supplied in a through-hole TO-220AB package, intended to handle elevated voltages and sustained currents while operating across a wide temperature span.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications
• 29A continuous drain capability supports substantial load currents
• 208W maximum dissipation allows high-power handling
• 88mΩ Rds(on) minimises conduction losses at rated conditions
• 53nC typical gate charge optimises switching energy and drive requirements
• 30V gate tolerance permits robust gate-drive margins
• 29A continuous drain capability supports substantial load currents
• 208W maximum dissipation allows high-power handling
• 88mΩ Rds(on) minimises conduction losses at rated conditions
• 53nC typical gate charge optimises switching energy and drive requirements
• 30V gate tolerance permits robust gate-drive margins
Applications
• Suitable for SMPS primary-side switching stages
• Ideal for industrial motor-drive inverter sections
• Used for high-voltage DC-DC converters in power supplies
• Can be used for electronic load and power-test equipment
• Used with discrete switch topologies in power factor correction
• Ideal for industrial motor-drive inverter sections
• Used for high-voltage DC-DC converters in power supplies
• Can be used for electronic load and power-test equipment
• Used with discrete switch topologies in power factor correction
What thermal extremes can it withstand in operation?
The device is specified to operate from -55°C up to 150°C, permitting use in both cold-start environments and elevated-temperature installations.
How is it mounted and integrated into a PCB design?
It uses a through-hole TO-220AB package with three pins and a mounting tab for heatsinking, allowing straightforward board fixation and thermal management via a heatsink attached to the tab.
What gate-drive considerations should be observed?
The maximum gate-to-source rating is 30V
gate-drive voltages should be kept within this limit and matched to the 53nC typical gate charge to ensure efficient switching without overstressing the gate.
What forward voltage characteristic is relevant during conduction?
The forward voltage is 1.2V, which informs conduction-loss calculations in low-voltage current paths and body-diode performance assessments.
相關連結
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