製造零件編號

Vishay EF Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-220

RS庫存編號:: 200-6817
製造零件編號:: SIHP125N60EF-GE3
製造商:: Vishay

Vishay EF Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-220

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD717.00

(不含稅)

TWD752.85

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年6月02日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
5 - 10	TWD143.40	TWD717.00
15 - 20	TWD139.60	TWD698.00
25 +	TWD137.80	TWD689.00

* 參考價格

RS庫存編號:: 200-6817
製造零件編號:: SIHP125N60EF-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	650V
	Series	EF
	Package Type	TO-220
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	47nC
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	179W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 650V
	Series EF
	Package Type TO-220
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 47nC
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 179W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Document- SIHP125N60EF-GE3

The Vishay SIHP125N60EF-GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Vishay EF Type N-Channel MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-220

訂單超過 $1,300.00 免費送貨

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