Vishay EF Type N-Channel MOSFET, 29 A, 650 V Enhancement, 3-Pin TO-220 SiHP105N60EF-GE3
- RS庫存編號:
- 200-6794
- 製造零件編號:
- SiHP105N60EF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 50 件）*
TWD5,175.00
(不含稅)
TWD5,434.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 50 - 50 | TWD103.50 | TWD5,175.00 |
| 100 - 150 | TWD101.20 | TWD5,060.00 |
| 200 + | TWD99.20 | TWD4,960.00 |
* 參考價格
- RS庫存編號:
- 200-6794
- 製造零件編號:
- SiHP105N60EF-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 88mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Height | 14.4mm | |
| Width | 4.65 mm | |
| Standards/Approvals | No | |
| Length | 10.52mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 88mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Height 14.4mm | ||
Width 4.65 mm | ||
Standards/Approvals No | ||
Length 10.52mm | ||
Automotive Standard No | ||
The Vishay SiHP105N60EF-GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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