Vishay SIHP Type N-Channel MOSFET, 47 A, 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- RS庫存編號:
- 279-9922
- 製造零件編號:
- SIHP054N65E-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 279-9922
- 製造零件編號:
- SIHP054N65E-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.058Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 312W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 108nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.058Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 312W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 108nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 47A Maximum Continuous Drain Current - SIHP054N65E-GE3
This MOSFET is a high-voltage N‑channel switching transistor designed for power conversion and control in industrial electronic systems. It operates across a wide temperature range and is supplied in a through‑hole TO‑220AB package for robust mounting and straightforward heat-sinking in assemblies requiring significant power handling.
Features and Benefits:
• 650V drain rating enables high-voltage switching applications • 47A continuous current supports heavy-load operation • 0.058Ω low on‑resistance reduces conduction losses • 312W power dissipation allows substantial heat handling • 108nC typical gate charge permits predictable switching behaviour • 30V gate tolerance ensures compatibility with standard gate drivers
Applications
• Suitable for SMPS primary switching in high-voltage supplies • Ideal for industrial motor drive front‑end stages • Used for power factor correction circuits in mains equipment • Can be used for inverter stages in renewable energy systems
What mounting format is provided for PCB and chassis integration?
The device is supplied in a through‑hole TO‑220AB package with three pins, enabling bolted heatsink attachment and conventional soldered PCB installation.
How does the device perform in high-temperature environments?
It is specified to operate up to 150°C, permitting use in elevated junction temperature designs with appropriate thermal management.
What gate drive considerations should I allow for during switching?
With a typical gate charge of 108nC, gate driver sizing must account for switching energy and transition speed to manage switching losses and EMI.
What are the device’s operating limits for safe gate voltage?
The maximum allowable gate‑to‑source voltage is 30V, so gate drive circuits must remain within this boundary to prevent device stress.
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