Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- RS庫存編號:
- 268-8317
- 製造零件編號:
- SIHP085N60EF-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD6,175.00
(不含稅)
TWD6,484.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,000 個，準備發貨
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD123.50 | TWD6,175.00 |
| 100 - 450 | TWD119.80 | TWD5,990.00 |
| 500 + | TWD116.20 | TWD5,810.00 |
* 參考價格
- RS庫存編號:
- 268-8317
- 製造零件編號:
- SIHP085N60EF-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHP Series MOSFET, 650V Drain Source Voltage, 34A Continuous Drain Current - SIHP085N60EF-GE3
This MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in demanding power circuits. It operates across a broad temperature span, making it suitable for environments where thermal robustness is required, and it offers substantial continuous current capability and voltage handling for conversion and switching tasks.
Features and Benefits:
• 650V drain-source rating enables high-voltage switching
• 34A continuous drain current supports heavy-load applications
• 0.084Ω low RDS(on) minimises conduction losses
• 184W power dissipation allows high-power operation
• 63nC typical gate charge permits controlled switching transitions
• 1.2V forward voltage reduces drop in body-diode conduction
• 34A continuous drain current supports heavy-load applications
• 0.084Ω low RDS(on) minimises conduction losses
• 184W power dissipation allows high-power operation
• 63nC typical gate charge permits controlled switching transitions
• 1.2V forward voltage reduces drop in body-diode conduction
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for switch-mode power supplies in industrial systems
• Used for motor-drive stages requiring high current handling
• Can be used for hard-switching topologies and energy recovery
• Suitable for laboratory and prototyping with through-hole mounting
• Ideal for switch-mode power supplies in industrial systems
• Used for motor-drive stages requiring high current handling
• Can be used for hard-switching topologies and energy recovery
• Suitable for laboratory and prototyping with through-hole mounting
What mounting method is required for board assembly?
It is supplied in a TO-220AB package intended for through-hole mounting and standard heatsinking options.
What gate drive voltage limits should I observe?
The maximum gate-source voltage is 30V, so gate-drive circuitry must keep within this limit to avoid damage.
How does it cope with temperature extremes during operation?
The device is rated to operate down to -55°C and up to 150°C, allowing use across wide ambient and elevated junction temperatures.
What polarity and mode does the channel present for circuit design?
It is an N-channel enhancement-mode device, requiring positive gate bias relative to the source for conduction.
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