Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3

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小計(1 管,共 50 件)*

TWD5,960.00

(不含稅)

TWD6,258.00

(含稅)

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每單位
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50 - 50TWD119.20TWD5,960.00
100 - 450TWD115.70TWD5,785.00
500 +TWD112.20TWD5,610.00

* 參考價格

RS庫存編號:
268-8317
製造零件編號:
SIHP085N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-220AB

Series

SIHP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

63nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology which has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correct

Low effective capacitance

Avalanche energy rated

Low figure of merit

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