Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- RS庫存編號:
- 279-9923
- 製造零件編號:
- SIHP074N65E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 管，共 50 件）*
TWD11,150.00
(不含稅)
TWD11,707.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,000 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD223.00 | TWD11,150.00 |
| 100 + | TWD198.20 | TWD9,910.00 |
* 參考價格
- RS庫存編號:
- 279-9923
- 製造零件編號:
- SIHP074N65E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SIHP | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.078Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SIHP | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.078Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SIHP Series MOSFET, 650V Drain Source Voltage, 35A Continuous Drain Current - SIHP074N65E-GE3
This MOSFET is a high-voltage N-channel enhancement device designed for power switching and conversion in industrial electronics. It supports through-hole mounting in a TO-220AB package and is suited to applications requiring robust thermal handling and gate protection within a broad ambient range.
Features and Benefits:
• 650V drain rating enabling high-voltage switching capability
• 35A continuous drain current for sustained power delivery
• 0.078Ω RDS(on) delivering low conduction losses
• 250W power dissipation for elevated thermal performance
• 8nC typical gate charge for efficient gate-drive switching
• 30V maximum gate-source protection to limit gate stress
• 35A continuous drain current for sustained power delivery
• 0.078Ω RDS(on) delivering low conduction losses
• 250W power dissipation for elevated thermal performance
• 8nC typical gate charge for efficient gate-drive switching
• 30V maximum gate-source protection to limit gate stress
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor inverter stages
• Used for renewable energy power-conditioning circuits
• Can be used for hard-switching in industrial converters
• Suitable for through-hole replacement in legacy designs
• Ideal for industrial motor inverter stages
• Used for renewable energy power-conditioning circuits
• Can be used for hard-switching in industrial converters
• Suitable for through-hole replacement in legacy designs
What temperature extremes can it withstand during operation?
It operates reliably across a wide thermal range from -55°C up to 150°C, allowing use in harsh ambient conditions.
How does the package affect cooling and mounting?
The TO-220AB through-hole package provides a metal tab for heatsinking and straightforward PCB or chassis attachment for enhanced thermal management.
What gate-drive considerations are required for switching performance?
Design gate drivers to supply sufficient current for an 8nC gate charge to achieve desired switching speeds while respecting the 30V gate-source limit.
Are there specific forward conduction characteristics to note?
The device presents a forward voltage of 1.2V under conduction, which should be accounted for in loss and thermal calculations.
相關連結
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP054N65E-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay SIHP Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP150N60E-GE3
- Vishay SIHP Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB SIHP155N60EF-GE3
- Vishay SF Series N channel-Channel MOSFET 650 V Enhancement, 3-Pin TO-220AB SIHP110N65SF-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 SiHP080N60E-GE3
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3