Vishay SIHP Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-220AB SIHP074N65E-GE3

This n-channel enhancement MOSFET is designed to switch and control high-voltage, high-current circuits in industrial and electronic systems. Suited to through-hole mounting, it provides a Compact power‑semiconductor solution for discrete power stages where robust voltage handling and thermal endurance are required. The device operates across a wide ambient range and is intended for use in applications demanding elevated operating temperatures and substantial continuous current capability.

• 650V drain voltage enables high-voltage switching applications
• 35A continuous current supports significant power delivery
• 0.078Ω on-resistance minimises conduction losses
• 250W power dissipation facilitates higher load handling
• 8nC typical gate charge allows Faster switching response
• 30V gate tolerance protects gate from common drive levels

• Suitable for high-voltage motor drive front-ends
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter stages in power conversion systems
• Can be used for electronic load switches in automation panels
• Suitable for surge suppressors and snubber network implementations

It is supplied in a through‑hole TO‑220AB package permitting secure mechanical attachment and efficient heatsinking to a chassis or heatsink plate.

It is rated for operation up to 150°C which supports thermal margins in densely packed power assemblies.

Expect a typical gate charge of 8nC at standard gate‑drive levels, informing gate‑driver current and switching‑energy calculations.

The device meets RoHS requirements regarding restricted substances in component materials.