Vishay SIHB Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-263 SIHB085N60EF-GE3
- RS庫存編號:
- 268-8293
- 製造零件編號:
- SIHB085N60EF-GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 包，共 2 件）*
TWD306.00
(不含稅)
TWD321.30
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,000 件從 2026年5月07日 起裝運發貨
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|---|---|---|
| 2 - 8 | TWD153.00 | TWD306.00 |
| 10 - 18 | TWD138.00 | TWD276.00 |
| 20 - 98 | TWD135.00 | TWD270.00 |
| 100 - 498 | TWD113.00 | TWD226.00 |
| 500 + | TWD109.50 | TWD219.00 |
* 參考價格
- RS庫存編號:
- 268-8293
- 製造零件編號:
- SIHB085N60EF-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | SIHB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series SIHB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay EF series power MOSFET with fast body diode and 4 generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correctio
Low effective capacitance
Avalanche energy rated
Low figure of merit
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