Vishay E Type N-Channel MOSFET, 34 A, 600 V Enhancement, 3-Pin TO-263

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RS庫存編號:
279-9903
製造零件編號:
SIHB150N60E-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.084Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

64nC

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.67mm

Automotive Standard

No

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 22A Maximum Continuous Drain Current - SIHB150N60E-GE3


This power MOSFET is a high-voltage switching transistor designed for use in power conversion and control circuits within industrial and automation environments. It operates as an enhancement-mode N-channel device in a surface-mount TO-263 package, offering a practical footprint for assemblies that require robust high-voltage switching while withstanding a wide temperature range.

Features and Benefits:


• 600V drain rating enables high-voltage switching applications • 22A continuous drain current allows sustained load handling • 0.137Ω Rds(on) reduces conduction losses under load • 179W power dissipation supports higher power stages • 36nC typical gate charge facilitates manageable switching losses • 30V gate voltage rating allows broad gate-drive flexibility

Applications


• Suitable for switch-mode power supplies requiring high-voltage transistors • Ideal for motor drives in industrial automation systems • Used for inverter stages in power conversion modules • Can be used for high-voltage relay replacement in control gear • Used with power assemblies operating at elevated temperatures

What temperature range can the device tolerate during operation?


It is specified to operate down to -55°C and up to 150°C ambient extremes, suitable for harsh industrial thermal conditions.

How many terminals does the package provide and what mounting style is used?


The device has three pins and is supplied in a surface-mount TO-263 package for PCB assembly.

What maximum gate drive should be applied to the gate electrode?


The gate-source voltage must not exceed 30V to prevent gate overstress.

What is the typical switching characteristic to consider for drive design?


The gate charge is 36nC, which should be factored into driver sizing to control switching transitions and losses.

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