Vishay EF Type N-Channel Power MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263 SIHB125N60EF-GE3
- RS庫存編號:
- 204-7245
- 製造零件編號:
- SIHB125N60EF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD236,700.00
(不含稅)
TWD248,520.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD78.90 | TWD236,700.00 |
| 6000 + | TWD77.30 | TWD231,900.00 |
* 參考價格
- RS庫存編號:
- 204-7245
- 製造零件編號:
- SIHB125N60EF-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65mm | |
| Standards/Approvals | RoHS | |
| Height | 4.06mm | |
| Length | 14.61mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9.65mm | ||
Standards/Approvals RoHS | ||
Height 4.06mm | ||
Length 14.61mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - SIHB125N60EF-GE3
This power MOSFET is a high-voltage N-channel switching transistor designed for surface-mount applications where robust drain current and thermal handling are required. It operates across a wide ambient range and is intended for switching and power conversion tasks in industrial and commercial electronics. The device is supplied in a TO-263 package compatible with surface-mount assembly and conforms to RoHS restrictions.
Features and Benefits:
• 600V rating enables high-voltage switching applications
• 25A continuous drain current supports heavy load currents
• 179W power dissipation allows sustained thermal performance
• 125mΩ Rds(on) minimises conduction losses during operation
• 31nC typical gate charge permits efficient gate-drive timing
• Vgs maximum 30V affords wide gate-drive margin for control
• 25A continuous drain current supports heavy load currents
• 179W power dissipation allows sustained thermal performance
• 125mΩ Rds(on) minimises conduction losses during operation
• 31nC typical gate charge permits efficient gate-drive timing
• Vgs maximum 30V affords wide gate-drive margin for control
Applications
• Suitable for primary-side SMPS switches in high-voltage supplies
• Ideal for power-factor-correction stages requiring high voltage
• Used with motor-drive front-ends handling elevated voltages
• Can be used for inverter-leg switches in industrial converters
• Suitable for LED drivers needing high-voltage switching capacity
• Ideal for power-factor-correction stages requiring high voltage
• Used with motor-drive front-ends handling elevated voltages
• Can be used for inverter-leg switches in industrial converters
• Suitable for LED drivers needing high-voltage switching capacity
What temperature extremes can the device withstand in service?
It is rated for operation from -55°C up to 150°C, allowing use in harsh thermal environments.
How many electrical connections does the package provide?
The device uses a three-pin configuration suitable for common MOSFET topologies and PCB layouts.
Is this device suitable for automotive qualification programmes?
It is not designated as an automotive-standard component and lacks explicit automotive approval.
What mounting method is required for thermal and mechanical stability?
It is intended for surface mounting in TO-263 format, which facilitates heat transfer to the PCB copper areas.
相關連結
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