Vishay EF Type N-Channel MOSFET, 25 A, 600 V Enhancement, 3-Pin TO-263
- RS庫存編號:
- 204-7245
- 製造零件編號:
- SIHB125N60EF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD249,600.00
(不含稅)
TWD262,080.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD83.20 | TWD249,600.00 |
| 6000 + | TWD81.50 | TWD244,500.00 |
* 參考價格
- RS庫存編號:
- 204-7245
- 製造零件編號:
- SIHB125N60EF-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | EF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.06mm | |
| Width | 9.65mm | |
| Standards/Approvals | No | |
| Length | 14.61mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series EF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.06mm | ||
Width 9.65mm | ||
Standards/Approvals No | ||
Length 14.61mm | ||
Automotive Standard No | ||
Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 25A Continuous Drain Current - SIHB125N60EF-GE3
This power MOSFET is a high-voltage N-channel semiconductor device designed for switching and power-conversion roles in industrial electronics. It is intended for surface-mount use on power assemblies where robust voltage handling and elevated temperature tolerance are required, supporting applications that switch high voltages and substantial currents in automation and electrical systems.
Features and Benefits:
• 600V drain rating enables high-voltage switching capability • 25A continuous drain current supports substantial load currents • 125mΩ Rds(on) reduces conduction losses under load • 31nC typical gate charge minimises drive energy requirements • 179W power dissipation allows sustained power handling • 150°C maximum operating temperature supports high-temperature environments
Applications
• Suitable for high-voltage inverter stages in industrial drives • Ideal for power supplies requiring high breakdown voltage • Used with motor controllers handling tens of amperes • Can be used for relay replacement in solid-state switching • Used for power conversion in automation equipment
What gate voltage range is safe for switching the device?
The device accepts gate voltages up to 30V, specifying the maximum permissible gate-to-source potential for reliable operation.
How does package choice affect thermal performance?
The TO-263 package offers a large thermal pad and leads for heat conduction, aiding heat transfer to PCB copper and heatsinks to support the rated power dissipation.
What are the environmental limits for operation?
The component is specified to operate down to -55°C and up to 150°C, defining the allowable ambient and junction extremes for design margins.
How many pins are available for PCB layout considerations?
The part uses three pins, which determines footprint and connection arrangements for drain, source and gate on the PCB.
相關連結
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