Vishay EF Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247 SiHG33N60EF-GE3

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包裝方式:
RS庫存編號:
903-4484
製造零件編號:
SiHG33N60EF-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Series

EF

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

98mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

103nC

Maximum Power Dissipation Pd

278W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

15.87mm

Height

20.82mm

Width

5.31 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor


Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current

Low figure-of-merit (FOM)

Low input capacitance (Ciss)

Increased robustness due to low Reverse Recovery Charge

Ultra low gate charge (Qg)

MOSFET Transistors, Vishay Semiconductor


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