Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3

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包裝方式:
RS庫存編號:
228-2842
製造零件編號:
SIHB120N60E-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

179W

Typical Gate Charge Qg @ Vgs

30nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 25A Continuous Drain Current - SIHB120N60E-T1-GE3


This power MOSFET is a high-voltage switching transistor designed for surface‑mount applications in industrial and automation environments. It functions as an N‑channel enhancement device suited to power conversion and switching tasks where robust voltage handling and substantial current flow are required. The component is supplied in a TO‑263 package with three terminals and is intended for use across a wide temperature range.

Features and Benefits:


• 650V drain-source rating enables high‑voltage switching
• 25A continuous drain current supports sustained load conditions
• 120mΩ on‑resistance reduces conduction losses under load
• 179W power dissipation allows substantial thermal headroom
• 30V gate tolerance permits flexible gate‑drive voltages
• Typical gate charge 30nC speeds switching transitions

Applications


• Suitable for industrial motor‑drive converters handling high voltages
• Ideal for SMPS and power‑supply front‑end switching stages
• Used for LED drivers and lamp control requiring high VDS
• Can be used for inverter stages in renewable‑energy systems
• Suitable for general‑purpose high‑voltage power switching in automation

What temperature extremes can this device tolerate during operation?


It is rated to operate down to -55°C and up to 150°C, allowing use in harsh thermal environments.

How does the package influence mounting and thermal performance?


The TO‑263 surface‑mount package facilitates soldered board mounting and offers a thermal path suitable for heatsinking via PCB copper and external attachments.

What gate‑drive considerations should be observed for reliable switching?


Keep gate voltage within ±30V and account for the typical 30nC gate charge when designing driver circuitry to ensure adequate drive current and switching speed.

Are there constraints on automotive use?


It is not specified as meeting automotive standards, so it should not be assumed suitable for certified automotive applications.

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