Vishay E Type N-Channel Power MOSFET, 25 A, 650 V Enhancement, 3-Pin TO-263 SIHB120N60E-T1-GE3
- RS庫存編號:
- 228-2841
- 製造零件編號:
- SIHB120N60E-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 800 件）*
TWD86,960.00
(不含稅)
TWD91,312.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月18日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 800 - 3200 | TWD108.70 | TWD86,960.00 |
| 4000 + | TWD106.50 | TWD85,200.00 |
* 參考價格
- RS庫存編號:
- 228-2841
- 製造零件編號:
- SIHB120N60E-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-263 | |
| Series | E | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-263 | ||
Series E | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 25A Continuous Drain Current - SIHB120N60E-T1-GE3
This power MOSFET is a high-voltage N-channel device designed for switching and power-conversion tasks in surface-mount assemblies. It operates across an extended temperature range and is intended for applications demanding significant voltage tolerance and thermal performance while complying with RoHS directives.
Features and Benefits:
• 650V drain-to-source withstand enables high-voltage switching
• 25A continuous drain current supports substantial load currents
• 120mΩ Rds(on) reduces conduction losses in power paths
• 179W power dissipation allows sustained thermal load handling
• 30V gate tolerance permits robust gate-drive margins
• 30nC typical gate charge for predictable switching energy
• 25A continuous drain current supports substantial load currents
• 120mΩ Rds(on) reduces conduction losses in power paths
• 179W power dissipation allows sustained thermal load handling
• 30V gate tolerance permits robust gate-drive margins
• 30nC typical gate charge for predictable switching energy
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used for DC-DC conversion in telecom equipment
• Can be used for power-factor-correction circuits
• Appropriate for UPS and battery-management switching
• Ideal for industrial motor-drive switching stages
• Used for DC-DC conversion in telecom equipment
• Can be used for power-factor-correction circuits
• Appropriate for UPS and battery-management switching
What thermal range can this device tolerate during operation?
It is rated to function from -55°C up to 150°C, permitting use in demanding thermal environments.
How is the device packaged for PCB assembly?
It comes in a TO-263 surface-mount package with three terminals for efficient board mounting and heat dissipation.
What switching behaviour can I expect regarding gate drive?
With a maximum gate-source voltage of 30V and a typical gate charge of 30nC, the gate-drive requirements are moderate and predictable for common gate-driver circuits.
Is this part suitable for automotive-spec applications?
It is not designated to automotive standards, so it should not be selected where automotive certification is required.
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