Vishay E Type N-Channel Power MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK
- RS庫存編號:
- 228-2871
- 製造零件編號:
- SiHH080N60E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD303,600.00
(不含稅)
TWD318,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月04日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD101.20 | TWD303,600.00 |
| 15000 + | TWD98.10 | TWD294,300.00 |
* 參考價格
- RS庫存編號:
- 228-2871
- 製造零件編號:
- SiHH080N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 184W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 184W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 650V Drain Source Voltage, 32A Continuous Drain Current - SiHH080N60E-T1-GE3
This power MOSFET is a high-voltage N-channel switching device designed for demanding power conversion and control tasks. It operates across a wide temperature range and is intended for surface-mounted applications where compact, robust switching performance is required. The component delivers substantial continuous current capability while supporting high drain-to-source voltages for use in industrial and electronic power stages.
Features and Benefits:
• 650V drain-to-source rating enables high-voltage switching
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions
• 32A continuous drain current supports sustained load handling
• 70mΩ Rds(on) reduces conduction losses during operation
• 42nC typical gate charge improves switching speed control
• 184W power dissipation allows significant thermal throughput
• 150°C maximum operating temperature tolerates elevated junctions
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules
• Ideal for industrial motor drive front-ends
• Used for power factor correction stages in converters
• Can be used for resonant and hard-switching inverter legs
• Used with discrete transistor arrays in power management modules
What gate voltage range is safe for control circuitry?
The gate may be driven up to 30V relative to source
control logic should remain within this limit to protect the gate oxide.
How does the package affect board-level thermal design?
The PowerPAK surface-mount package with four pins requires thermal vias or heatsinking on the PCB to dissipate up to 184W under specified conditions.
What environmental extremes can the device withstand?
It is rated for continuous operation down to -55°C and up to 150°C, allowing use across wide ambient and junction temperature swings.
What type of channel conduction does the device provide?
It is an enhancement-mode N-channel device, conducting when a positive gate-to-source voltage is applied.
相關連結
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH075N65E-T1-GE3
- Vishay E Series N channel-Channel MOSFET 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK075N65E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3