Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK
- RS庫存編號:
- 653-084
- 製造零件編號:
- SIHR120N60E-T1-GE3
- 製造商:
- Vishay
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* 參考價格
- RS庫存編號:
- 653-084
- 製造零件編號:
- SIHR120N60E-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 8 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay 4th generation E Series Power MOSFET optimized for high-performance switching applications. It offers a low figure of merit (FOM), reduced switching and conduction losses, and low effective capacitance. Packaged in the Compact PowerPAK 8x8LR, it's Ideal for use in server, telecom, lighting, and industrial power supplies.
Pb Free
Halogen free
RoHS compliant
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