Vishay E Type N-Channel Power MOSFET, 38 A, 600 V Enhancement, 8-Pin PowerPAK

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  • 2026年12月04日 發貨
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RS庫存編號:
653-080
製造零件編號:
SIHR100N60E-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.105Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

347W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

10.42mm

Standards/Approvals

RoHS

Width

8mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 38A Maximum Continuous Drain Current - SIHR100N60E-T1-GE3


This power MOSFET is a high-voltage N-channel enhancement device designed for switching and control tasks in industrial electronics. It operates as a surface-mount transistor suitable for power conversion and high-voltage switching environments, offering a balance of voltage handling and thermal endurance for use in demanding assemblies.

Features and Benefits:


• 600V drain-source rating enables high-voltage switching capability • 38A continuous drain current supports substantial load currents • 0.105Ω Rds(on) minimises conduction losses during operation • 347W power dissipation allows sustained thermal loading • 34nC typical gate charge permits efficient gate-drive control • -55°C to 150°C operating range supports extreme-temperature operation

Applications


• Suitable for high-voltage power converters in industrial automation • Ideal for motor-drive front-ends requiring robust switching • Used for switch-mode power supplies handling elevated voltages • Can be used for power-factor correction stages in electrical systems • Used with gate drivers in high-voltage inverter designs

What mounting style does it require for assembly?


It is designed for surface mounting in a PowerPAK package, requiring standard SMT reflow profiles and appropriate copper planning for heat dissipation.

How does gate-drive voltage affect switching?


The device tolerates up to 30V on the gate relative to source

utilising recommended gate voltages optimises turn-on speed while avoiding gate overvoltage.

What thermal considerations are needed for high-power applications?


Given the 347W power dissipation rating, adequate PCB copper area and thermal vias are necessary to transfer heat away from the package to maintain junction temperatures below maximum limits.

Is this device suitable for automotive designs?


It is not specified as automotive-grade, so suitability depends on system-level requirements and any additional qualification needed by the designer.

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