Vishay E Type N-Channel Single MOSFETs, 32 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3

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小計(1 卷,共 3000 件)*

TWD384,900.00

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TWD404,160.00

(含稅)

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RS庫存編號:
653-083
製造零件編號:
SIHR120N60E-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

600V

Series

E

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.12Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8 mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay 4th generation E Series Power MOSFET optimized for high-performance switching applications. It offers a low figure of merit (FOM), reduced switching and conduction losses, and low effective capacitance. Packaged in the Compact PowerPAK 8x8LR, it's Ideal for use in server, telecom, lighting, and industrial power supplies.

Pb Free

Halogen free

RoHS compliant

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