Vishay SIR4156LDP Type N-Channel Single MOSFETs, 25.7 A, 100 V Enhancement, 8-Pin PowerPAK SIR4156LDP-T1-GE3
- RS庫存編號:
- 653-190
- 製造零件編號:
- SIR4156LDP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD45,900.00
(不含稅)
TWD48,180.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD15.30 | TWD45,900.00 |
* 參考價格
- RS庫存編號:
- 653-190
- 製造零件編號:
- SIR4156LDP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SIR4156LDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.033Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 43W | |
| Typical Gate Charge Qg @ Vgs | 8.8nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Height | 1.72mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SIR4156LDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.033Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 43W | ||
Typical Gate Charge Qg @ Vgs 8.8nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Height 1.72mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and optimized thermal performance.
Pb Free
Halogen free
RoHS compliant
相關連結
- Vishay SIR4156LDP Type N-Channel Single MOSFETs 100 V Enhancement, 8-Pin PowerPAK
- Vishay SIRA18DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK SIRA18DDP-T1-GE3
- Vishay SISS5812DN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SISS5812DN-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay SI2122DS Type N-Channel Single MOSFETs 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3
- Vishay SI3122DV Type N-Channel Single MOSFETs 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3