Vishay SI2122DS N-Channel Single MOSFETs, 2.17 A, 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3

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小計(1 卷,共 3000 件)*

TWD19,500.00

(不含稅)

TWD20,460.00

(含稅)

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RS庫存編號:
653-085
製造零件編號:
SI2122DS-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

2.17A

Maximum Drain Source Voltage Vds

100V

Series

SI2122DS

Package Type

PowerPAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.160Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

2.9nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free

Halogen free

RoHS compliant

Used in LED backlighting

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