Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3

RS庫存編號:: 653-112
製造零件編號:: SIS5712DN-T1-GE3
製造商:: Vishay

Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD62,100.00

(不含稅)

TWD65,220.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 6,000 個，準備發貨

單位	每單位	每卷*
3000 +	TWD20.70	TWD62,100.00

* 參考價格

RS庫存編號:: 653-112
製造零件編號:: SIS5712DN-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPAK
	Series	SIS5712DN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0555Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	39.1W
	Typical Gate Charge Qg @ Vgs	5.8nC
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	Lead (Pb)-Free
	Height	1.04mm
	Length	3.30mm
	Width	3.30mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPAK
	Series SIS5712DN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0555Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 39.1W
	Typical Gate Charge Qg @ Vgs 5.8nC
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals Lead (Pb)-Free
	Height 1.04mm
	Length 3.30mm
	Width 3.30mm
	Automotive Standard No

Datasheet - SIS5712DN-T1-GE3

COO (Country of Origin):: CN

Vishay SIS5712DN Series Single MOSFETs, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIS5712DN-T1-GE3

This single MOSFET device is a surface-mount N-channel transistor intended for high-voltage switching and power-management roles in industrial electronics. It operates over a wide thermal range suitable for demanding environments and is provided in a compact PowerPAK package for space-conscious board layouts. The device is lead-free and offers enhancement-mode switching performance for conventional gate-driven applications.

Features and Benefits:

• 150V drain tolerance enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom

Applications

• Suitable for industrial motor-drive stages
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits

What thermal range can it withstand during operation?

It is rated to function from -55°C up to 150°C, accommodating extreme ambient and junction temperatures.

How does the gate specification affect driver selection?

The 20V maximum gate-source rating defines the maximum permissible gate-drive amplitude and informs driver voltage margins to avoid overstress.

What electrical characteristic governs switching losses during transitions?

The typical gate charge of 5.8nC influences the required drive energy and switching speed, affecting switching-loss calculations.

How does the device package assist PCB assembly?

The PowerPAK surface-mount format supports automated placement and soldering while enabling efficient thermal coupling to the PCB copper.