Vishay SIS5712DN Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK

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RS庫存編號:
653-113
製造零件編號:
SIS5712DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

150V

Series

SIS5712DN

Package Type

PowerPAK

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0555Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

5.8nC

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

39.1W

Maximum Operating Temperature

150°C

Length

3.30mm

Standards/Approvals

Lead (Pb)-Free

Width

3.30mm

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
CN

Vishay SIS5712DN Series Single MOSFETs, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SIS5712DN-T1-GE3


This single MOSFET device is a surface-mount N-channel transistor intended for high-voltage switching and power-management roles in industrial electronics. It operates over a wide thermal range suitable for demanding environments and is provided in a compact PowerPAK package for space-conscious board layouts. The device is lead-free and offers enhancement-mode switching performance for conventional gate-driven applications.

Features and Benefits:


• 150V drain tolerance enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 0.0555Ω Rds(on) reduces conduction losses
• 39.1W power dissipation permits high-power handling
• 5.8nC gate charge allows fast gate transitions
• 20V gate rating ensures robust gate-drive headroom

Applications


• Suitable for industrial motor-drive stages
• Used for switch-mode power supply primary switches
• Ideal for server and telecom power distribution
• Can be used for battery management and converters
• Used with high-voltage lighting and inverter circuits

What thermal range can it withstand during operation?


It is rated to function from -55°C up to 150°C, accommodating extreme ambient and junction temperatures.

How does the gate specification affect driver selection?


The 20V maximum gate-source rating defines the maximum permissible gate-drive amplitude and informs driver voltage margins to avoid overstress.

What electrical characteristic governs switching losses during transitions?


The typical gate charge of 5.8nC influences the required drive energy and switching speed, affecting switching-loss calculations.

How does the device package assist PCB assembly?


The PowerPAK surface-mount format supports automated placement and soldering while enabling efficient thermal coupling to the PCB copper.

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