Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK SIRA12DDP-T1-GE3
- RS庫存編號:
- 653-144
- 製造零件編號:
- SIRA12DDP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD22,200.00
(不含稅)
TWD23,310.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD7.40 | TWD22,200.00 |
* 參考價格
- RS庫存編號:
- 653-144
- 製造零件編號:
- SIRA12DDP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 81A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK | |
| Series | SIRA12DDP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0036Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.2nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.15 mm | |
| Length | 5.15mm | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 81A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK | ||
Series SIRA12DDP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0036Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.2nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.15 mm | ||
Length 5.15mm | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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