Vishay SI3122DV N-Channel Single MOSFETs, 1.95 A, 100 V Enhancement, 6-Pin PowerPAK SI3122DV-T1-GE3
- RS庫存編號:
- 653-088
- 製造零件編號:
- SI3122DV-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 3000 件）*
TWD23,100.00
(不含稅)
TWD24,240.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 6,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD7.70 | TWD23,100.00 |
* 參考價格
- RS庫存編號:
- 653-088
- 製造零件編號:
- SI3122DV-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 1.95A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerPAK | |
| Series | SI3122DV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.160Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 1.34W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Standards/Approvals | No | |
| Width | 2.98mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 1.95A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerPAK | ||
Series SI3122DV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.160Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 1.34W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Standards/Approvals No | ||
Width 2.98mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in a TSOP-6 format, it utilizes TrenchFET Gen IV technology to deliver low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.
Pb Free
Halogen free
RoHS compliant
Used in LED backlighting
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