Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

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小計(1 卷,共 3000 件)*

TWD67,800.00

(不含稅)

TWD71,190.00

(含稅)

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RS庫存編號:
653-148
製造零件編號:
SISS5208DN-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

172A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK

Series

SISS5208DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0013Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

24.6nC

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Length

3.40mm

Height

0.83mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 20 V drain-source voltage. Packaged in PowerPAK 1212-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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