Vishay E Type N-Channel MOSFET, 12 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- RS庫存編號:
- 210-4990
- 製造零件編號:
- SIHH240N60E-T1-GE3
- 製造商:
- Vishay
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可享批量折扣
小計（1 包，共 5 件）*
TWD382.00
(不含稅)
TWD401.10
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,945 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD76.40 | TWD382.00 |
| 750 - 1495 | TWD74.40 | TWD372.00 |
| 1500 + | TWD73.40 | TWD367.00 |
* 參考價格
- RS庫存編號:
- 210-4990
- 製造零件編號:
- SIHH240N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 208mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 7.9mm | |
| Height | 0.9mm | |
| Width | 7.9 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 208mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 7.9mm | ||
Height 0.9mm | ||
Width 7.9 mm | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET has PowerPAK 8 x 8 package type with single configuration.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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