Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- RS庫存編號:
- 279-9914
- 製造零件編號:
- SIHH150N60E-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 件）*
TWD192.00
(不含稅)
TWD201.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 49 | TWD192.00 |
| 50 - 99 | TWD187.00 |
| 100 - 249 | TWD184.00 |
| 250 - 999 | TWD180.00 |
| 1000 + | TWD177.00 |
* 參考價格
- RS庫存編號:
- 279-9914
- 製造零件編號:
- SIHH150N60E-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIHH | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.158Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIHH | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.158Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Automotive Standard No | ||
Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHH150N60E-T1-GE3
This MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in industrial and electronic systems. It operates across a wide thermal range and is packaged for surface mounting, making it suitable for Compact power assemblies where controlled switching of high voltages is required.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching applications • 19A continuous drain current supports substantial load currents • 0.158Ω Rds(on) reduces conduction losses at operating current • 36nC typical gate charge allows predictable switching energy • 156W maximum power dissipation manages thermal loading in designs • 30V gate threshold accommodates standard gate-drive voltages
Applications
• Suitable for high-voltage power supplies and inverters • Ideal for industrial motor-drive switching stages • Used for switch-mode power conversion in automation systems • Can be used for high-voltage load switching in test equipment
What temperature extremes can it tolerate during operation?
It is rated to operate down to -55°C and up to 150°C, enabling use in harsh thermal environments.
How is the device mounted in Compact power modules?
It is supplied in a PowerPAK 8x8 surface-mount package with four pins for low-profile PCB assembly.
What gate-drive constraints should be observed?
The gate-source voltage must not exceed 30V to avoid exceeding gate limits.
How does its package affect thermal handling?
The PowerPAK 8x8 surface package combined with the 156W dissipation rating permits efficient heat transfer when paired with appropriate PCB thermal design.
相關連結
- Vishay SIHH Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3
- Vishay SIHK Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK155N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR120N60E-T1-GE3
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK SIHR100N60E-T1-GE3
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR1309DP-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- Vishay SIEH3812EW N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 8 x 8 SIEH3812EW-T1-GE3