Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

RS庫存編號:: 279-9913
製造零件編號:: SIHH150N60E-T1-GE3
製造商:: Vishay

Vishay SIHH Type N-Channel MOSFET, 19 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH150N60E-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD317,400.00

(不含稅)

TWD333,270.00

訂單超過 $1,300.00 免費送貨

有庫存

3,000 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD105.80	TWD317,400.00

* 參考價格

RS庫存編號:: 279-9913
製造零件編號:: SIHH150N60E-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Series	SIHH
	Package Type	PowerPAK 8 x 8
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.158Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Power Dissipation Pd	156W
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	8mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Series SIHH
	Package Type PowerPAK 8 x 8
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.158Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Power Dissipation Pd 156W
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 8mm
	Automotive Standard No

Datasheet - SIHH150N60E-T1-GE3

Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 19A Continuous Drain Current - SIHH150N60E-T1-GE3

This MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in industrial and electronic systems. It operates across a wide thermal range and is packaged for surface mounting, making it suitable for Compact power assemblies where controlled switching of high voltages is required.

Features and Benefits:

• 600V drain-source rating enables high-voltage switching applications • 19A continuous drain current supports substantial load currents • 0.158Ω Rds(on) reduces conduction losses at operating current • 36nC typical gate charge allows predictable switching energy • 156W maximum power dissipation manages thermal loading in designs • 30V gate threshold accommodates standard gate-drive voltages

Applications

• Suitable for high-voltage power supplies and inverters • Ideal for industrial motor-drive switching stages • Used for switch-mode power conversion in automation systems • Can be used for high-voltage load switching in test equipment

What temperature extremes can it tolerate during operation?

It is rated to operate down to -55°C and up to 150°C, enabling use in harsh thermal environments.

How is the device mounted in Compact power modules?

It is supplied in a PowerPAK 8x8 surface-mount package with four pins for low-profile PCB assembly.

What gate-drive constraints should be observed?

The gate-source voltage must not exceed 30V to avoid exceeding gate limits.

How does its package affect thermal handling?

The PowerPAK 8x8 surface package combined with the 156W dissipation rating permits efficient heat transfer when paired with appropriate PCB thermal design.