Vishay Type P-Channel MOSFET, 5.7 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7415DN-T1-GE3
- RS庫存編號:
- 180-7759
- 製造零件編號:
- SI7415DN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 10 件)*
TWD396.00
(不含稅)
TWD415.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 950 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD39.60 | TWD396.00 |
| 750 - 1490 | TWD38.50 | TWD385.00 |
| 1500 + | TWD38.10 | TWD381.00 |
* 參考價格
- RS庫存編號:
- 180-7759
- 製造零件編號:
- SI7415DN-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.065Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.61 mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Length | 3.61mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.065Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.61 mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Length 3.61mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount P-channel PowerPAK-1212-8 MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.8W and continuous drain current of 5.7A. It has a minimum and a maximum driving voltage 4.5V and 10V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fast switching
• Halogen free
• Lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Half-bridge motor drives
• High voltage non-synchronous buck converters
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
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