製造零件編號

Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

RS庫存編號:: 814-1323
製造零件編號:: SISS27DN-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 20 件）*

TWD382.00

(不含稅)

TWD401.20

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 4,320 個，準備發貨

單位	每單位	每包*
20 - 740	TWD19.10	TWD382.00
760 - 1480	TWD18.60	TWD372.00
1500 +	TWD18.40	TWD368.00

* 參考價格

RS庫存編號:: 814-1323
製造零件編號:: SISS27DN-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	30V
	Series	TrenchFET
	Package Type	PowerPAK 1212
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	57W
	Typical Gate Charge Qg @ Vgs	92nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	3.3 mm
	Length	3.3mm
	Height	0.78mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 30V
	Series TrenchFET
	Package Type PowerPAK 1212
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 57W
	Typical Gate Charge Qg @ Vgs 92nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 3.3 mm
	Length 3.3mm
	Height 0.78mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: CN

Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3

訂單超過 $1,300.00 免費送貨

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