Vishay TrenchFET Type N-Channel MOSFET, 65 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3
- RS庫存編號:
- 228-2825
- 製造零件編號:
- SI7116BDN-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD296.00
(不含稅)
TWD310.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD29.60 | TWD296.00 |
| 50 - 90 | TWD28.80 | TWD288.00 |
| 100 - 240 | TWD28.20 | TWD282.00 |
| 250 - 990 | TWD27.60 | TWD276.00 |
| 1000 + | TWD26.80 | TWD268.00 |
* 參考價格
- RS庫存編號:
- 228-2825
- 製造零件編號:
- SI7116BDN-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Typical Gate Charge Qg @ Vgs | 31.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 62.5W | ||
Typical Gate Charge Qg @ Vgs 31.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
Very low Qg and Qoss reduce power loss and
improve efficiency
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
相關連結
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS178LDN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SISS27DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212 SiSS54DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 20 V Enhancement, 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAK 1212 SiS176LDN-T1-GE3