Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3
- RS庫存編號:
- 228-2931
- 製造零件編號:
- SiSH892BDN-T1-GE3
- 製造商:
- Vishay
可享批量折扣
小計（1 包，共 10 件）*
TWD232.00
(不含稅)
TWD243.60
(含稅)
添加 60 件 件可免費送貨
暫時缺貨
- 5,970 件從 2026年2月23日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD23.20 | TWD232.00 |
| 50 - 90 | TWD22.70 | TWD227.00 |
| 100 - 240 | TWD22.10 | TWD221.00 |
| 250 - 990 | TWD21.40 | TWD214.00 |
| 1000 + | TWD20.90 | TWD209.00 |
* 參考價格
- RS庫存編號:
- 228-2931
- 製造零件編號:
- SiSH892BDN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17.4nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 29W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17.4nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 29W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 100 V (D-S) MOSFET PowerPAK.
100 % Rg and UIS tested
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